gate-turn-off thyristor

The composite insulated Gate Bipolar Transistor model. Gate TurnOff Thyristor model and MOSFET Control Thyristor model are presented as examples of the composite model method, together with simulations and experimental results.

作为应用组合模型原理的实例，文中给出了组合绝缘门根晶体管模型、组合门极可关断晶闸管模型和组合MOSFET控制晶闸管模型，并和实际器件进行比较。

The paper introduces the operation principle and key technology of the Integrated Gate Commutated Thyristor ( IGCT).

阐述了新型功率半导体器件&集成门极换向型晶闸管IGCT（Integrated Gate Commutated Thyristor）的基本工作原理和关键设计技术。